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 TSM2N7002E
50V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3 RDS (on), Vgs @ 5V, Ids @ 50mA = 4
Features
Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package
Block Diagram
Ordering Information
Part No. TSM2N7002ECX TSM2N7002ECU Packing T&R (3kpcs/Reel) Package SOT-23 SOT-323
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 oC Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG
o
Symbol
VDS VGS ID IDM PD
Limit
50 20 250 1.0 200 150 +150 - 55 to +150
Unit
V V mA A mW
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL Rja
Limit
5 625
Unit
S
o
C/W
TSM2N7002E
1-5
2004/12 rev. B
Electrical Characteristics
Tj = 25 oC unless otherwise noted
Parameter Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance
Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0V, ID = 10uA VGS = 10V, ID = 250mA VGS = 5V, ID = 50mA VDS = VGS, ID = 250uA VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VDS 7V, VGS = 10V VDS = 7V, ID = 200mA
BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs
50 --1.0 --500 80
---2.0 -----
-3 4 2.5 1.0 100 ---
V
V uA nA mA mS
Dynamic *
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 100mA, VGEN = 10V, RG = 10 TD(ON) tr TD(OFF) tf Ciss Coss Crss -------7.5 6 7.5 3 19 10 3 20 -20 -50 25 5 pF nS
Source-Drain Diode
Max. Diode Forward Current Diode Forward Voltage IS = 115mA, VGS = 0V IS VSD ---0.76 115 1.5 mA V
Note : pulse test: pulse width <=300uS, duty cycle <=2% * Guaranteed by design, not subject to production testing.
TSM2N7002E
2-5
2004/12 rev. B
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
Output Characteristic Transfer Characteristics
Drain Current (A)
Drain to source voltage (V)
Drain Current (A)
Gate to source voltage (V)
Capacitance
Drain to source resistance ()
Rds(on) Variation with Drain Current
Capacitance (pF)
Drain to source voltage (V)
Drain current (A)
Vgs(th) with Temperature
Gate -source threshold voltage (V) Drain -source breakdown voltage (V)
o Junction temperature ( C)
Vds breakdown with Temperature
Junction temperature (oC)
TSM2N7002E
3-5
2004/12 rev. B
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
Transconductance Variation
Source-drain Current (A)
Body Diode Forward Voltage
Transconductance (S)
Drain to source current (A)
Body diode forward voltage (V)
Gate Charge
Gate -source voltage (V)
Maximum Safe Operating Area
Total gate charge (nC)
Drain Current (A)
Drain-source voltage (V)
Normalized Thermal Transient Impedance Curve
Transient thermal impedance r(t)
Square wave pulse duration (S)
TSM2N7002E
4-5
2004/12 rev. B
SOT-23 Mechanical Drawing
A B
F
DIM A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.88 2.91 0.113 0.115 0.39 0.42 0.015 0.017 1.78 2.03 0.070 0.080 0.51 0.61 0.020 0.024 1.59 1.66 0.063 0.065 1.04 0.07 1.08 0.09 0.041 0.003 0.043 0.004
E
G
F G
D
C
SOT-323 Mechanical Drawing
DIM A A1 bp C D E e e1 He Lp Q W
SOT-323 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.0315 0.0433 -0.10 -0.0039 0.30 0.40 0.0118 0.0157 0.10 0.25 0.0039 0.0098 1.80 2.20 0.0709 0.0866 1.15 1.35 0.0453 0.0531 1.30 -0.0512 -0.65 -0.0256 -2.00 2.20 0.0787 0.0866 0.15 0.45 0.0059 0.0177 0.13 0.23 0.0051 0.0091 0.20 -0.0079 -o o 10 -10 --
TSM2N7002E
5-5
2004/12 rev. B


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